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| TIP125 ... TIP127 TIP125 ... TIP127 PNP Version 2006-10-17 100.2 3 4 3.8 Type Typ Si-Epitaxial Planar Darlington Power Transistors Si-Epitaxial Planar Darlington-Leistungs-Transistoren Max. power dissipation with cooling Max. Verlustleistung mit Kuhlung Collector current Kollektorstrom Plastic case Kunststoffgehause Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen PNP 65 W 5A TO-220AB 2.2 g 15.7 123 13.2 1.5 0.9 2.54 Dimensions - Mae [mm] 1=B 2/4 = C 3=E Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spg. Collector-Base-voltage - Kollektor-Basis-Spg. Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung without cooling - ohne Kuhlung with cooling - mit Kuhlung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Base current - Basisstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur TA = 25C TC = 25C Ptot Ptot - IC - ICM - IB Tj TS B open E open C open - VCEO - VCBO - VEBO 60 V 60 V 3.4 Grenzwerte (TA = 25C) TIP125 TIP126 80 V 80 V 5V 2 W 1) 65 W 5A 8A 120 mA -55...+150C -55...+150C TIP127 100 V 100 V Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 2) - IC = 0.5 A, - VCE = 3 V - IC = 3 A, - VCE = 3 V Small signal current gain - Kleinsignal-Stromverstarkung - IC = 3 A, - VCE = 4 V, f = 1 MHz hfe 4 hFE hFE 1000 1000 Kennwerte (Tj = 25C) Typ. - - Max. - - 1 2 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig wenn die Anschlussdrahte in 5 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 TIP125 ... TIP127 Characteristics (Tj = 25C) Min. Collector-Emitter saturation volt. - Kollektor-Emitter-Sattigungsspg. 2) - IC = 3 A, IB = 12 mA - IC = 5 A, IB = 20 mA Base-Emitter voltage - Basis-Emitter-Spannung 2) - IC = 3 A, - VCE = 3 V Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom - VCE = 30 V, (B open) - VCE = 40 V, (B open) - VCE = 50 V, (B open) - VCB = 60 V, (E open) - VCB = 80 V, (E open) - VCB = 100 V, (E open) - VCB = 10 V, IE = ie = 0, f = 100 kHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Thermal resistance junction to case Warmewiderstand Sperrschicht - Gehause Admissible torque for mounting Zulassiges Anzugsdrehmoment Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Equivalent Circuit - Ersatzschaltbild T 1 T 2 Kennwerte (Tj = 25C) Typ. - - - - - - - - - - < 63 K/W 1) < 3 K/W 9 10% lb.in. 1 10% Nm TIP120 ... TIP122 C2 Max. 2V 4V 2.5 V 500 nA 500 nA 500 nA 200 nA 200 nA 200 nA 200 pF - VCEsat - VCEsat - VBE TIP125 TIP126 TIP127 TIP125 TIP126 TIP127 - ICEO - ICEO - ICEO - ICBO - ICBO - ICBO CCB0 RthA RthC M4 - - - - - - - - - - Collector-Base cutoff current - Kollektor-Basis-Reststrom Collector-Base Capacitance - Kollektor-Basis-Kapazitat E B C B1 T1 T2 E2 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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